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A uniformly doped silicon npn bipolar transistor is to be biased in the forward-active mode with the B-C junction reverse biased by 3V. The...
A uniformly doped silicon npn bipolar transistor is to be biased in the forward-active mode with the B-C junctionreverse biased by 3V. The metallurgical base width is 1.10*10^-6m. The transistor dopings are NE = 10^17 cm^-3;NB =10^16 cm^-3, and NC = 10^15 cm^-3.a) For T = 300K, calculate the B-E voltage at which the minority-carrier electron concentration at x = 0 is 10percent of the majority-carrier concentration (in the base).b) At this bias, determine the minority-carrier hole concentration at x0 = 0 (in the emitter).c) Determine the neutral base width xB for this bias.
