Consider an n+ -poly-Si-gated long-channel n-MOSFET with W/L = 10, L=45nm, oxide thickness Tox = 2 nm. Gate work function FM = 4.

Consider an n+ -poly-Si-gated long-channel n-MOSFET with W/L = 10, L=45nm, oxide thickness Tox = 2 nm. Gate

work function FM = 4.1 eV. p-type Si substrate doping NA = 1017 cm-3 maintained at T = 300K.

Threshold voltage of this device is 0.4 V.

a. What is minimum drain voltage at which channel pinch off (Fig.1) can be observed. How does further increase in VDS affect the channel? Justify