Hi, need to submit a 2750 words paper on the topic Aluminum nitride thin films report.

Hi, need to submit a 2750 words paper on the topic Aluminum nitride thin films report. The measurements of the spectroscopic values have been used to show that the bandgap and the refractive index of the film normally fall in the range of 5.0eV and 5.48eV and 1.58Ev and 1.84eV respectively. Measurements of the secondary mass of ion spectroscopy indicate that oxygen is present in the thin film of aluminium nitride.

Aluminium nitride is a group 3 and period 5 compounds that exhibit very good properties in terms of their physical characteristics, chemical properties and mechanical characteristics. Thin aluminium nitride films of high quality have been used in a number of devices and some sensors which include the optical and the optical-electronic devices (Schupp et al, 2010). The optical-electronic devices have a wide gap of approximately 6.2eV and a refractive index of about 2.0 which make the aluminium nitrides very attractive for use in optics. In addition, the thermal and the chemical stability of aluminium nitride films normally make it suitable for it to be used in environments of difficulties (Takikawa et al, 2001). Today, the aluminium nitride films and coatings have been produced using several methods such as the pulsed laser deposition method, the reactive molecular beam epitaxy method, the vacuum arc deposition method, the DC/RF reactive sputtering technique, the ion beam sputtering method, the metal-organic chemical vapour deposition method and a number of other techniques (Cheng et al, 2003). As a result of the simplicity and the ease of upscaling and reproduction of the aluminium nitride films, the sputtering of magnetrons becomes the most common method of growing aluminium nitride films for the various applications that exist. However, it is very difficult to obtain insulating films of high quality using the direct current magnetrons sputtering method but it holds a notable advantage of having a high rate of deposition making it more suitable for the production of high quality and cost-effective films that are dielectric in nature (Venkataraj et al, 2006). The properties of the aluminium nitride films are dependent on the structural nature of the materials, the microstructure, orientation and chemical composition.