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PUSAT PENGAJIAN PENDIDIKAN JARAK JAUH UNIVERSITI SAINS MALAYSIA JIF 418 Semiconductor and Devices Assignment 2 Assignment dateline: 15 Jan 2012 1....
A Si p-n diode with junction cross sectional area 10−3 cm2, has two regions doped with 1016 P cm−3 and 1018 B cm−3 respectively.a) At equilibrium and temperature 300 K, calculate thei) Fermi levels of regions, p and n.ii) contact potential.iii) width of the transition region.iv) maximum value of the electric field.b) Determine the diode current at 300 K when voltage 0.5 V is applied, given the transport characteristics of the diode are:region n μp = 300 cm2 V−1 s−1 ; μn = 1300 cm2 V−1 s−1Dp = 7.8 cm2 s−1 ; Dn = 33 cm2 s−1region p μp = 100 cm2 V−1 s−1 ; μn = 280 cm2 V−1 s−1Dp = 2.6 cm2 s−1 ; Dn = 7.3 cm2 s−1τn = τp = 10−6 s2. Elaborate on a semiconductor device in terms of the fabrication, structure, electrical characteristics, and usage.
