Q4 (3) 03) Given | unit of'N-PN BJT transistor with the. power rating of 2 W, ue = 100 and r 'c - an and Van = DEV for fowvard biasing. Design a...

hi i have this questions

(1) given 1 unit of NPN BJT transistor with the power rating of 2W,Bdc=100 and r'e=2ohm and Vbe=0.7v for foward biasing.

(a)Design a simple power amplifier using common emitter configuration driven by +20V DC supply to achieve Q point at the centre of DC and AC load line and with the maximum efficiency .Consider a load of Rl =100ohm in your design.Show your calculation and sketch the schematic diagram.You may refer to appendix for the commercial value of resistor.

(b) calculate the power gainAp and maximum load power Pl