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You will prepare and submit a term paper on The Different Modes of Fabrication in CMOS. Your paper should be a minimum of 1250 words in length.
You will prepare and submit a term paper on The Different Modes of Fabrication in CMOS. Your paper should be a minimum of 1250 words in length. The formation of MOS takes place by superimposing several layers of insulating, conducting, and transistor forming materials. The CMOS technology provides two types of transistors namely the n-type transistor and the p-type transistor.
The CMOS was invented in 1963 by Frank Wanlass. This technology has been used in every electronically digitally integrated circuit in the modern world. This has been made possible by their operating speed also reduction of size in every subsequent production of CMOS (Thes, 2008). The development in CMOS technology tends to rely on Moore’s law, which stated that, “an approximate 30% reduction in linear dimension and introduction of products with the new technology 2 years after the previous” (Sadan & Current, 2002).
It was used in selected discrete and integrated circuits in the 1960s. It was developed to be used for space exploration making it used in early satellites and space exploration systems (Colinge, 2010). These devices were fabricated with SOS (silicon on sapphire), but recently they are fabricated with SIMOX (separation by Implanted Oxygen). In the recent world, SOI fabricators continue to be researched due to their use in the fabrication of the CMOS’s ICs (Marshall and Natarajan, 2002). Industry players believed by 2006-2008 there would be a huge shift to the fully depleted SOI CMOS would occur. During 2010, it was believed that 10% of the transistors would have been using this technology (Baker & Jacob, 2008).
This is a technology that provides for separate optimization of the nMOS and the pMOS transistors. After the implementation, it allows for threshold voltage, body effect, and channel trans-conductance of both types of transistors to be tuned independently. The good region is formed by n+ and p+ substrate (Veendrick & Harry, 2008).
It is formed with diffusion or ion implantation. It starts with a moderately doped p_type silicon substrate. An entire oxide layer is grown on the entire surface.
